发明名称 |
Process for fabricating thin film transistors |
摘要 |
Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
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申请公布号 |
US2002019081(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010836884 |
申请日期 |
2001.04.17 |
申请人 |
DENIS KEVIN L.;CHEN YU;DRZAIC PAUL S.;JACOBSON JOSEPH M.;KAZLAS PETER T. |
发明人 |
DENIS KEVIN L.;CHEN YU;DRZAIC PAUL S.;JACOBSON JOSEPH M.;KAZLAS PETER T. |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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