| 发明名称 |
Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition |
| 摘要 |
<p>A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated. <IMAGE></p> |
| 申请公布号 |
EP1179843(A2) |
申请公布日期 |
2002.02.13 |
| 申请号 |
EP20010306568 |
申请日期 |
2001.07.31 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ITOH, TOSHIO;YANG, MICHAEL X.;MARCADAL, CHRISTOPHE |
| 分类号 |
H01L21/205;C23C16/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/205 |
| 代理机构 |
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