| 摘要 |
A method for characterizing semiconductor device performance variations includes processing a wafer in a processing line to form a feature on the wafer; measuring a physical critical dimension of the feature in a first metrology tool to generate a first critical dimension measurement; measuring the physical critical dimension of the feature in a second metrology tool to generate a second critical dimension measurement independent of the first critical dimension measurement; determining an effective critical dimension of the feature in a third metrology tool to generate a third critical dimension measurement; and comparing the first, second, and third critical dimension measurements to identify a metrology drift in one of the first and second metrology tools. A system for characterizing semiconductor device performance variations includes a processing line, first, second, and third metrology tools, and a process controller. The processing line is adapted to process a wafer to form a feature on the wafer. The first metrology tool is adapted to measure a physical critical dimension of the feature to generate a first critical dimension measurement. The second metrology tool is adapted to measure the physical critical dimension of the feature to generate a second critical dimension measurement independent of the first critical dimension measurement. The third metrology tool adapted to determine an effective critical dimension of the feature to generate a third critical dimension measurement. The process controller is adapted to compare the first, second, and third critical dimension measurements to identify a metrology drift in one of the first and second metrology tools.
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