| 摘要 |
Quantum dot infrared detection device and method for fabricating the same, which is a new concept of detection device in which quantum dots in the quantum dot part having a stack of alternative quantum dots and separating layers are doped with impurities, so that the quantum dot part itself absorbs infrared ray and serves as a channel for transferring electrons generated by the infrared ray absorption, for enhancing device performance and a device uniformity, and simplifying a device structure and a device fabrication process.
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