| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device capable of attaining plasma etching which decelerate accumulation of sediment by suppressing the sticking local reaction product. SOLUTION: An etching chamber 10 includes the mounting table 11 of a semiconductor wafer W and a gas feeding head 12 to be used as an upper electrode and a lower electrode for plasma induction by a high frequency power source RF in common inside. As for the head 12, raw gas EG for etching through a gas introduction pipe 131 and a gas feeding path 121 and dilution gas DG through a gas introduction pipe 132 and a gas feeding path 122 are introduced into a chamber divided respectively. At a gas blowout plate 123, a gas feeding port 124 is formed over the wafer W correspondingly. A dilution gas feeding port 125 is formed so as to surround the periphery of the port 124.
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