SEMICONDUCTOR WAFER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer which can improve flatness of a wafer even after polishing and satisfy requirements for high flatness to a wafer. SOLUTION: Flatness of the surface of a silicon substrate is measured and silicon epitaxial layer whose thickness varies with a place is formed by a vapor phase epitaxial method in a substrate surface according to irregularities of a substrate surface. During formation of a silicon epitaxial layer, flow rate of the raw gas, which is made to flow along a substrate surface, is made to vary for parts on a wafer.