| 摘要 |
The point memory comprises a p-type MOS transistor whose gate is not electrically connected, and which in the ring implementation comprises a central electrode (10), surrounded by the gate (20) and a peripheral electrode (30). The central electrode (10) is the drain electrode, and the peripheral electrode (30) is the source electrode. The peripheral electrode comprises at least two, in particular eight contact points (C1,...,C8). An integrated circuit comprises at least one point memory of read-only type as proposed. The integrated circuit also comprises a control circuit for applying programming and reading voltages to the point memory. |
