| 摘要 |
PROBLEM TO BE SOLVED: To produce a memory cell having a cell capacitor and a peripheral transistor on a wafer. SOLUTION: On a memory cell forming area and a peripheral transistor forming area on the wafer, first and second gate electrodes are formed through a gate oxide film. Continuously, after an insulating film is formed to cover the first and second gate electrodes, a side wall insulating film is formed only on the side wall of the second gate electrode by anisotropically etching only the insulating film covering the relevant second gate electrode. |
