发明名称 JIG FOR HEAT TREATING SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a jig for heat treating semiconductor wafer and a method for manufacturing the same causing no crystal defect such as slip on the semiconductor wafer under high temperature heat treatment. SOLUTION: The jig for heat treating a semiconductor wafer and the method for manufacturing the same comprises a wafer holding member formed capable of holding the semiconductor wafer, and a holding surface built on the wafer holding member for contacting and holding the semiconductor wafer with powder of heat-resistant high purity materials adhering on the same.</p>
申请公布号 JP2002043239(A) 申请公布日期 2002.02.08
申请号 JP20000222031 申请日期 2000.07.24
申请人 TOSHIBA CERAMICS CO LTD 发明人 SAKAGAMI HIROYUKI;KOSEKI HIROO
分类号 H01L21/683;H01L21/205;H01L21/22;H01L21/68;(IPC1-7):H01L21/22 主分类号 H01L21/683
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