| 摘要 |
A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer (14, 52) is disclosed. The precursor comprises a moiety that includes a first metal atom (202), an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the first metal atom (202) and to the nitrogen atom. The first metal atom (202) may be a Group III, Group IV, or Group V transition metals. The precursor may include one or more alkoxy groups (208) bonded to the first metal atom (202). In one embodiment the precursor further includes one or more siloxy (212) or alkyl siloxy (212) groups bonded to the first metal atom (202). In one embodiment, the dielectric layer (14, 52) may be intended as a gate dielectric layer (14) or a capacitor dielectric layer (52). |
