发明名称 |
Method of growing a semiconductor layer |
摘要 |
This invention relates to a method of growing a nitride semiconductor layer by molecular beam epitaxy comprising the steps of: a) heating a GaN substrate (S) disposed in a growth chamber (10) to a substrate temperature of at least 850° C.; and b) growing a nitride semiconductor layer on the GaN substrate by molecular beam epitaxy at a substrate temperature of at least 850° C., ammonia gas being supplied to the growth chamber (10) during the growth of the nitride semiconductor layer; wherein the method comprises the further step of commencing the supply ammonia gas to the growth chamber during step (a), before the substrate temperature has reached 800° C.
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申请公布号 |
US2002015866(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US20010884881 |
申请日期 |
2001.06.18 |
申请人 |
HOOPER STEWART EDWARD;HEFFERNAN JONATHAN;BARNES JENNIFER MARY;KEAN ALISTAIR HENDERSON |
发明人 |
HOOPER STEWART EDWARD;HEFFERNAN JONATHAN;BARNES JENNIFER MARY;KEAN ALISTAIR HENDERSON |
分类号 |
C30B29/38;C30B23/02;C30B23/08;C30B25/02;H01L21/203;(IPC1-7):B32B9/00;B32B19/00;C23C16/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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