| 摘要 |
<p>In a laser diode device with a semiconductor body (1) mounted on a heat sink (12) of widely differing thermal expansion coefficient, an electrically and thermally conductive connection plate (3) is positioned between the body (1) and the heat sink (12), the plate (3) consisting of a material having a thermal expansion coefficient similar to that of the semiconductor material of the body (1). Also claimed are processes for prodn. of several laser diode devices as described above. Pref. the body (1) consists of GaAs, AlGaAs and/or InAlGaAs; the heat sink (12) consists of diamond, Si or Cu; the connection plate (3) consists of Mo or W; and the connection plate (12) is fixed to the body (1) by brazing using a layer sequence (2) of Ti-Pt-AuSn.</p> |
