| 摘要 |
<p>A method of modifying the threshold voltages of a plurality (NOR-MX) of non-volatile memory cells, for example, flash EEPROM memory cells, after an erasure operation, is described. In order to perform the equalization quickly and to optimize the use of the voltage supplies for biasing the columns, the method provides for the following steps: connecting all of the column lines to a voltage supply (CH-P, V-REG), monitoring (V-SEN) the supply voltage, and applying (R-GEN), to all of the row lines, a voltage variable from a predetermined minimum value to a predetermined maximum value, the rate of change being regulated (R-GEN) to the maximum possible value compatible with the maintenance of the supply voltage of the lines at a substantially constant, predetermined value. The same method can be used for reliable and quick programming of a memory of the flash EEPROM type, or of another type. <IMAGE></p> |
