发明名称 |
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication |
摘要 |
A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current. |
申请公布号 |
AU7187901(A) |
申请公布日期 |
2002.02.05 |
申请号 |
AU20010071879 |
申请日期 |
2001.07.06 |
申请人 |
ADVANCED POWER DEVICES |
发明人 |
PAUL CHANG;GEENG-CHUAN CHERN;WAYNE Y. W. HSEUH;VLADIMIR RODOV |
分类号 |
H01L21/28;H01L21/329;H01L21/336;H01L27/08;H01L27/095;H01L29/78;H01L29/861;H01L29/872 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|