| 发明名称 |
Manufacturing method for semiconductor metalization barrier |
| 摘要 |
A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
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| 申请公布号 |
US6344410(B1) |
申请公布日期 |
2002.02.05 |
| 申请号 |
US20000634025 |
申请日期 |
2000.08.08 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LOPATIN SERGEY D.;PRAMANICK SHEKHAR;BROWN DIRK |
| 分类号 |
H01L21/288;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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