发明名称 METHOD FOR FORMING METAL FILM PATTERN
摘要 PURPOSE: A method for forming a film pattern on metal is provided to prevent notch phenomena of metal surface due to scattered reflection. CONSTITUTION: The method includes the steps of injecting Ar gas onto a metal film(2) formed on a substrate(1) to decrease reflection degree from 190-210 % to 180-190 %; applying a photosensitive film on the metal film, followed by forming a photosensitive patter through lithography; and etching the photosensitive pattern by etching mask to form a metal film pattern, followed by removal of the photosensitive pattern.
申请公布号 KR100324593(B1) 申请公布日期 2002.02.01
申请号 KR19940008752 申请日期 1994.04.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, HUI BOK
分类号 C23C18/22;(IPC1-7):C23C18/22 主分类号 C23C18/22
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