HIGH DIELECTRIC CONSTANT METAL SILICATES FORMED BY CONTROLLED METAL-SURFACE REACTIONS
摘要
A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound an oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises the metal-oxygen-silicon bonds.
申请公布号
WO0209167(A2)
申请公布日期
2002.01.31
申请号
WO2001US22711
申请日期
2001.07.18
申请人
NORTH CAROLINA STATE UNIVERSITY;PARSONS, GREGORY, N.;CHAMBERS, JAMES, J.;KELLY, M., JASON
发明人
PARSONS, GREGORY, N.;CHAMBERS, JAMES, J.;KELLY, M., JASON