| 摘要 |
Provided are a semiconductor device comprising a polymetal gate electrode that can prevent formation of a silicide layer at the interface between metal and conductive silicon and also exhibit low resistance property and ohmic property, and a method for manufacturing the same. Specifically, a polymetal gate electrode is formed via a gate insulating film (2), e.g., an oxide film, on a semiconductor substrate (1), e.g., a silicon substrate. The polymetal gate electrode has such a structure that a conductive silicon film (3), e.g., a poly-Si film, a silicide film (4), e.g., a WSi film, a barrier film (5), e.g., a WSiN film, and a metal film (6), e.g., a W film, are stacked over the semiconductor substrate (1) in the order named.
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