发明名称 |
RESURF LDMOS integrated structure |
摘要 |
A reduced surface field (RESURF) lateral diffused metal oxide semiconductor (LDMOS) integrated circuit includes a first region having a first conductivity type defined in a semiconductor substrate having a second conductivity type, a body region having the second conductivity type in the first region, and a source region having the first conductivity type formed in the body region. More specifically, the body region may be within a surface portion of the first region that is more heavily doped than the remainder of the of the first region.
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申请公布号 |
US2002011626(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US20010839596 |
申请日期 |
2001.04.20 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CROCE GIUSEPPE;MOSCATELLI ALESSANDRO;MERLINI ALESSANDRA;GALBIATI PAOLA |
分类号 |
H01L29/08;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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