| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a terminal of a wafer level CSP by using a pointed gold bump formed by a wire bonding method as it is without leveling and further forming a package electrode directly on the bump. SOLUTION: A sharp gold bump is formed on an aluminum electrode or copper electrode on the top surface of a semiconductor wafer by a conventional method using a wire bonder, and copper foil with resin is laminated by being heated and pressed. Here, the copper foil thickness is about 75 μm and the resin thickness is 50 to 60 μm depending upon the size of the bump, the sharp tip of the gold bump is pressed and crushed by the copper foil, and the gold bump and copper foil are fixed with epoxy resin while electrically connected by press contacting. Then an electrode is formed by etching the copper foil. |
