| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOSFET which can reduced switching loss at a high frequency and has a low on-resistance. SOLUTION: This MOSFET has a p-type epitaxial layer 12 formed on the main surface of a p+-type semiconductor substrate 11, n+-type diffusion layers 17A and 17B separately formed in the epitaxial layer 12, and a gate electrode 14 formed on the epitaxial layer 12 through a gate insulating film 13 between the diffusion layers 17A and 17B. The MOSFET also has a contact plug 18 which is buried in a trench formed through the epitaxial layer 12 and electrically connects the diffusion layer 17A to the substrate 11, a source electrode 25 which is formed on the rear surface of the substrate 11 and electrically connected to the substrate 11, and a drain electrode 24 which is formed on the epitaxial layer 12 through an insulating fill insulated from the diffusion layer 17A and gate electrode 14 and electrically connected to the diffusion layer 17B. |
