发明名称 Self ionized sputtering using a high density plasma source
摘要 A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
申请公布号 US2002008017(A1) 申请公布日期 2002.01.24
申请号 US20010918136 申请日期 2001.07.30
申请人 FU JIANMING 发明人 FU JIANMING
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
代理机构 代理人
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