| 摘要 |
A CMP machine (100, 200, 300) and/or process that uses selective heating of the polishing pad/belt (120, 220, 320) to improve uniformity. A heating mechanism (110) is used to heat a selected area such as the perimeter (130, 230, 330) of the pad or belt (120, 220, 320). Heating the selected area improves the removal rate in that area. For example, heating along the perimeter of the pad (120, 220, 320) improves the removal rate at the perimeter of the semiconductor wafer (150). |
