发明名称 |
Metal barrier for copper interconnects that incorporates silicon in the metal barrier or at the copper/metal barrier interface |
摘要 |
A copper interconnect having a barrier layer (106, 206). A metal barrier layer may be co-deposited with Si to form barrier (106) or a metal barrier layer may be deposited followed by surface treatment with a Si-containing ambient to form barrier (206). The copper (110) is then deposited over the said barrier layer (106,206) with good adhesion.
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申请公布号 |
US2002009880(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US20010821940 |
申请日期 |
2001.03.30 |
申请人 |
JIANG QING-TANG;LU JIONG-PING;GANESAN DEVARAJAN |
发明人 |
JIANG QING-TANG;LU JIONG-PING;GANESAN DEVARAJAN |
分类号 |
H01L23/522;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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