METHOD FOR TREATING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To diminish defects caused after development without increasing unevenness in the intrasurface dimensions of a substrate. SOLUTION: In a method for treating a substrate in which the disclosed surface of a substrate 11 to be worked is washed with pure water after a resist 12 exposed through an LSI pattern on the substrate 11 is developed with a TMAH developing solution, washing is carried out using ozonic water 17 containing 3 ppm dissolved gaseous ozone for 15 sec while turning the substrate 11 at 500 r.p.m. in the first washing step to degrade organic substances sticking to the disclosed surface of the substrate 11 and washing is carried out using hydrogenous water 18 containing 1.2 ppm dissolved gaseous hydrogen for 15 sec while turning the substrate 11 at 500 r.p.m. in the second washing step to remove the degraded organic substances from the substrate.