MOS IMAGE SENSOR

摘要

An image sensor circuit which employs a photodiode in conjunction with a cha rge transfer mechanism. By employing the photodiode, at least a portion of the l ight sensed does not pass through a layer of polysilicon, and so is not prevented from r eaching the sensing area by the polysilicon. The image sensor circuit of the invention i s made up of device structures readily available in standard CMOS process technologies Advantageously, image sensors embodying the invention show substantially imp roved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformi ty, thus improving yield.