| 摘要 |
PURPOSE: A method for planarizing a semiconductor wafer is provided to prevent a planarization target layer from being crushed by the pressure of a pad of a chemical mechanical polishing(CMP) apparatus by hardening the planarization target layer while overcoming a planarization defect of the wafer, and to improve a planarization characteristic by performing an annealing process after the CMP process. CONSTITUTION: A CMP process is carried out to planarize the semiconductor wafer(11). An annealing process is performed before and after the CMP process is performed, so that the planarization target layer(12) is reflowed to increase the planarization of the semiconductor wafer.
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