BIASED SHIELD IN MAGNETRON SPUTTERING REACTOR

摘要

PURPOSE: A biased shield in a magnetron sputtering reactor is provided to produce a relatively high fraction of ionized sputtered atoms. CONSTITUTION: A magnetron sputter reactor(10) and its method of operation which produces a high fraction of sputtered metal ions and in which the metal ions are confined by a positively biased shield(12) and attracted to a negatively biased pedestal electrode(24) supporting the wafer (22) to be sputter coated. The shield (12) may be positively biased to between 10 and 50 VDC, preferably between 15 and 40 VDC while the negative self-bias on the pedestal is typical tens of volts. A grounded shield(56) is positioned between the target(16) and the biased shield(12).