发明名称 MICROSTRUCTURED THERMOSENSOR
摘要 <p>The invention relates to a microstructured thermosensor (5), especially an infrared sensor, which has a support body (12) and at least one thermoelement (20) which is located thereon. Said thermoelement (20) has a first material (13) and a second material (14) which together form at least one thermocontact (10, 11), at least at points. The invention also provides that the first and/or second material (13, 14) is configured in the form of a square-wave or wave-shaped strip conductor (15, 16), at least in areas, and that these are guided on the support body (12). The invention also relates to a microstructured thermosensor (5) comprising strip conductors (15, 16) which are preferably also structured in this way, the first material (13) being platinum or aluminum and the second material (14) being doped or non-doped poly-silicon-germanium</p>
申请公布号 WO2002004905(A1) 申请公布日期 2002.01.17
申请号 DE2001002145 申请日期 2001.06.07
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