| 摘要 |
For the purpose of a sufficient exposure tolerance and a sufficient lithographic process tolerance like the depth of focus while reducing the line width difference due to the patter density of a resist pattern without applying a load to fabrication of a mask, correction is made to the overlapping width a1 of a translucent region of a phase shift mask and a shading region of a binary mask used upon high-resolution exposure (isolated pattern), the overlapping width a2 (L/S pattern), line width b1 in a phase shift mask (isolated pattern) and the line width b2 (L/S pattern) toward decreasing the line width difference among resist patterns when a resist pattern having patterns like an isolated pattern and an L/S pattern that are different in pattern density. |
