发明名称 |
Method of plasma depositing a low dielecric constant insulating film on a copper surface |
摘要 |
<p>In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react. <IMAGE></p> |
申请公布号 |
EP1172846(A2) |
申请公布日期 |
2002.01.16 |
申请号 |
EP20010115669 |
申请日期 |
2001.07.04 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SHIOYA, YOSHIMI;OHIRA, KOUICHI;MAEDA, KAZUO;SUZUKI, TOMOMI;IKAKURA, HIROSHI;YAMAMOTO, YOUICHI |
分类号 |
C23C16/42;C23C16/30;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/316;C23C16/40 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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