发明名称 METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR
摘要 PURPOSE: To provide a new method for manufacturing a TFT which can remarkably reduce the number of manufacturing steps for a liquid crystal display device by using a pattern formation method enabling convenient reduction of the number of photolithographical steps. CONSTITUTION: A material film forming a TFT is laminated on an insulating film substrate, a resist mask having a plurality of areas of different thicknesses is provided on an uppermost layer and then patterned. And a conductor film is formed in the form of a pattern by a lift-off process using the resist mask. Or a resist mask separately formed and having a plurality of areas having different thicknesses is used to sequentially process ones of the laminated material films. Using such a new pattern formation method and processing method, a liquid crystal display device so far manufactured in five photolithographical steps in the prior art can be manufactured in two or three photolithographical steps.
申请公布号 KR20020004848(A) 申请公布日期 2002.01.16
申请号 KR20010039285 申请日期 2001.07.02
申请人 NEC CORPORATION 发明人 KIDO SHUSAKU
分类号 G03F7/26;G03C5/00;G03F7/40;G03F7/42;H01L21/027;H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/3205;H01L21/336;H01L21/77;H01L29/786;(IPC1-7):H01L29/786 主分类号 G03F7/26
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