| 摘要 |
PURPOSE: A method for growing carbon nanotube in a horizontal direction, and a method is provided which manufactures a device using carbon nanotube grown in a horizontal direction. CONSTITUTION: The method for fabricating carbon nanotube comprises the steps of preparing a substrate(100); forming a metallic pattern(110) consisting of a transition metal on the substrate; forming an insulating film pattern(120) on the upper part of the metallic pattern; and forming carbon nanotube(130), wherein the metallic pattern comprises Ni, Fe or Co, a thickness of the metallic pattern is 1,000 Å or less, the insulating film pattern covers the upper part and any one side of the metallic pattern and comprises a silicon oxide film or a silicon nitride film. The method for fabricating carbon nanotube comprises the steps of preparing a substrate(100); forming a metallic pattern(110) on the substrate; forming an insulating film pattern(120) on the upper part of the metallic pattern; forming a plating layer(150) consisting of a transition metal at one side of the metallic pattern; and forming carbon nanotube(130) connected to the plating layer, wherein the plating layer is formed by using electroplating or chemical vapor deposition. The method for fabricating a device using carbon nanotube comprises the steps of preparing a substrate(100); forming a metallic pattern(110) consisting of a transition metal on the substrate; forming an insulating film pattern(120) on the upper part of the metallic pattern; forming carbon(130); and forming a metallic layer covering the insulating film pattern and the metallic pattern.
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