| 发明名称 |
METHOD FOR FORMING INTERLAYER INSULATION FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To enhance heat resistance of an interlayer insulation film comprising an organic SOG film. SOLUTION: A material principally comprising a carbon fluoride compound having a polycyclic structure in molecule is subjected to plasma polymerization to form interlayer insulation films 202, 204 of fluorinated amorphous carbon film. The carbon fluoride compound is perfluorodecalin, perfluorofluorene or perfluorotetradecahydrophenanthrene.
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| 申请公布号 |
JP2002009067(A) |
申请公布日期 |
2002.01.11 |
| 申请号 |
JP20010113473 |
申请日期 |
2001.04.12 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
AOI NOBUO;SUGAWARA TAKESHI;ARAI YASUSHI;SAWADA KAZUYUKI |
| 分类号 |
H01L21/768;C08G83/00;H01L21/314;H01L21/3205;H01L23/522;(IPC1-7):H01L21/314;H01L21/320 |
主分类号 |
H01L21/768 |
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