发明名称 |
SYNCHRONOUS BURST MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of a random access memory device and/or to provide a synchronous random access memory device having burst transfer capability in architecture, in detail. SOLUTION: This device is provided with a memory array and a burst sequence generator. The memory array can be formed so as to store data. The burst sequence generator can be formed so as to generate burst sequence responding to address information received by the device. The burst sequence can be formed so as to discriminate plural positions for storing data in the memory array. The device can accommodate the maximum operation current of 50 mA and/or the maximum standby current of approximately 25μA.
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申请公布号 |
JP2002008376(A) |
申请公布日期 |
2002.01.11 |
申请号 |
JP20010133392 |
申请日期 |
2001.03.26 |
申请人 |
CYPRESS SEMICONDUCTOR CORP |
发明人 |
ARCOLEO MATHEW R;MANAPAT RAJESH;HARMEL SCOTT |
分类号 |
G11C11/407;G06F12/02;G11C7/10;G11C11/401;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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