| 摘要 |
PROBLEM TO BE SOLVED: To accurately simulate a voltage and frequency dependences of a gate insulation film capacitance which appear in a long-channel transistor and simultaneously to obtain a correct simulation result in a transient analysis, in the transistor model for the circuit simulator. SOLUTION: When a model which represents one transistor as a single transistor is defined as a mono-transistor mode, and a model which represents one transistor as a structure that multiple sub transistors are connected in series and the gate insulation film capacitor is connected to each sub transistor is defined as a multi-transistor mode, the mono-transistor model or the multi- transistor model is chosen to simulate each transistor. In the mono-transistor model, the gate insulation film capacitor is connected between a gate electrode and a source electrode. The mono-transistor model is used for a short-channel transistor in which the kink effect exists, and the multi-transistor model is used for a long-channel transistor in which the kink effect does not exist.
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