发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROTECTOR
摘要 PROBLEM TO BE SOLVED: To protect a light emitting diode against thermal breakdown due to overload. SOLUTION: An overheat preventive transistor 4 and an overvoltage preventive constant voltage diode 5 are connected in parallel to form a composite protective element 3 which is then connected in parallel with a light emitting diode 2. The transistor 3 is thermally coupled with the light emitting diode 2. When an abnormal temperature is detected utilizing the negative temperature coefficient of the transistor 3, the transistor 3 is conducted to form a bypath of the light emitting diode 2.
申请公布号 JP2002009343(A) 申请公布日期 2002.01.11
申请号 JP20000191368 申请日期 2000.06.26
申请人 SANKEN ELECTRIC CO LTD 发明人 KOBAYASHI NOBUO
分类号 H01L33/32 主分类号 H01L33/32
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