发明名称 METHOD FOR INCREASING WRITE GUARANTEE FREQUENCY OF FLASH MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that write guarantee the number of times of a flash memory is not large enough as compared with a conventional EEPROM to store a control program and user adjustment data of high modification frequency in the same flash memory. SOLUTION: Data are written into a flash memory 2 where program areas and user adjustment data areas are separated, sector by sector; and user adjustment data of high write frequency has its sector area divided into areas and are written to unwritten areas each time writing is updated, and when there is no unwritten area left, the sectors are erased in batch, to enable re-writing, thereby obtaining a write guarantee frequency of substantially the same level with the conventional EEPROM.</p>
申请公布号 JP2002007221(A) 申请公布日期 2002.01.11
申请号 JP20000190902 申请日期 2000.06.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KARIYA TETSUO;MATSUMOTO YOSHIAKI
分类号 G06F12/16;G11C16/02;G11C29/00;G11C29/04;(IPC1-7):G06F12/16 主分类号 G06F12/16
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