| 摘要 |
PROBLEM TO BE SOLVED: To limit the current injection region of a ridge semiconductor laser and to obtain the high-efficiency semiconductor laser. SOLUTION: A semiconductor laser element is provided with a lower clad layer 2, an active layer 3, a first upper clad layer 4 and an etching stop layer 5 which are stacked in order on a substrate 1, a second ridge upper clad layer 7 provided on the layer 5, and optical confinement layers 10 provided on the sides of the layer 7. Insulating films 13 respectively exist in the interfaces between the layer 4 and the layers 10, and these insulating films 13 have an effect to prevent a current from flowing between the layer 4 and the layers 10.
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