| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor of which the leakage current is suppressed. SOLUTION: Formation of a region with an opposite polarity to that of a drain region and a higher impurity concentration than that of a well area of a MOS transistor in a lower part of the drain region of the MOS transistor, can suppress broadening of a depletion layer between the drain and the well toward the well side. Especially, since the broadening of the depletion layer in a lower part of the drain region toward the well side can be suppressed, the current flowing through a deeper path than the channel is suppressed effectively.
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