DEPOSITION FILM-FORMING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a deposition film-forming apparatus that performs improved lattice matching of the junction interface between an amorphous i-type layer and a microcrystal conductive layer and has improved current/voltage characteristics and photoconductive conversion efficiency, especially an apparatus for mass-producing a photovoltaic element continuously using a roll-to-roll apparatus. SOLUTION: This deposition film-forming apparatus for forming a deposition film by continuously depositing a plurality of semiconductor layers on a substrate of continuous length by the plasma CVD method is provided with at least a first deposition chamber having a means for feeding a feed gas from the upstream side to the downstream side in the traveling means of the substrate of continuous length, and a second deposition chamber having a means for feeding the feed gas from the downstream side to the upstream side in the traveling direction of the substrate of continuous length. The first and second deposition chambers are connected by a separation passage.