| 摘要 |
A memory device comprising an n-channel transistor and p-channel transistor, both transistors having a source, a drain and a gate, the source and drains of the transistors being connected in series and the gates of the transistors being connected together, with each transistor having a ferroelectric material separating the gate from the source and drain thereof. Preferably a single ferroelectric material acts as the ferroelectric material for both transistors and a single gate acts as the gate for both transistors. Beneficially the device comprises a single substrate having an n-type source, an n-type drain, a p-type source and a p-type drain formed in a surface thereof and a single area of the substrate which separates all of these regions from each other has intrinsic doping only. The invention also relates to a method of manufacturing such memory devices.
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