发明名称 |
Method of forming interlayer insulating film |
摘要 |
A material containing, as a main component, an organic silicon compound represented by the following general formula: <paragraph lvl="0"><in-line-formula>R1xSi(OR2 )4-x </in-line-formula>(where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.
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申请公布号 |
US2002004298(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US20010900142 |
申请日期 |
2001.07.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGAHARA GAKU;AOI NOBUO;ARAI KOJI;SAWADA KAZUYUKI |
分类号 |
C23C16/26;C23C16/30;C23C16/40;H01L21/3105;H01L21/312;H01L21/314;H01L21/316;H01L21/768;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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