METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming gate electrode of a semiconductor device is provided to prevent a penetration of a dopant by forming a diffusion preventing layer after heat treating a silicon seed layer under a nitrogen gas. CONSTITUTION: A gate oxide layer(110) is formed on a semiconductor substrate(100). A silicon seed layer(120) is formed on the gate oxide layer. A diffusion preventing layer is formed on the silicon seed layer and the gate oxide layer after heat treating the silicon seed layer. A polysilicon germanium layer(130) is formed on the resultant structure. The poly silicon germanium layer is doped by a dopant, thereby preventing efficiently a penetration of the dopant.