ARRANGEMENT WITH P-DOPED AND N-DOPED SEMICONDUCTOR LAYERS AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to an arrangement with P-doped semiconductor layers (12) and N-doped semiconductor layers (14, 10). Said arrangement has junctions between said P-doped semiconductor layers (12) and said N-doped semiconductor layers (14, 10), these junctions showing a Zener breakdown when a characteristic voltage for a junction is applied. A plurality of junctions are present between the P-doped semiconductor layers (12) and the N-doped semiconductor layers (14, 10) and the characteristic voltages enter additively into the breakdown voltage of the arrangement overall. The invention also relates to a method for producing an inventive arrangement.