发明名称 METHOD FOR FORMING METAL LINE
摘要 PURPOSE: A method for forming a metal line is provided to improve an electric characteristic of a metal line by forming the metal line as a deposition process. CONSTITUTION: An insulating substrate(31) having a plug layer(34) is prepared. The second oxide layer(35) and a photoresist layer are formed on the insulating substrate(31). The photoresist layer is exposed and developed selectively. The second oxide layer(35) is etched by using the photoresist layer as an etch mask. A contact hole is formed by etching the second oxide layer(35). The photoresist layer is removed. A polymer layer(38) as a dummy layer is formed on the second oxide layer(35) including the contact hole. A sidewall of the polymer layer(38) is formed on a side of the second oxide layer(35) by etching back the polymer layer(38). A metal layer is formed on the whole surface of the above structure. A metal line(39) is formed within the contact hole by etching back the metal layer.
申请公布号 KR20020002960(A) 申请公布日期 2002.01.10
申请号 KR20000037335 申请日期 2000.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JEONG HO;YOO, JAE SEON
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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