| 摘要 |
PURPOSE: A method for fabricating an FD(Fully Depleted) SOI(Silicon On Insulator) MOSFET(Metal-Oxide Semiconductor Field-Effect Transistor) is provided to improve a thickness change of layer and an inner pressure characteristic in an FD SOI MOSFET using a recess channel. CONSTITUTION: A part of a recess channel formation portion is formed on an SOI substrate(10) by performing a photo-etch process. A channel profile is formed by performing a channel implantation process. A channel is formed to be thinner than a source/drain region by performing an etch process. A dummy spacer is formed. A length of the channel is handled by using the dummy spacer. Ions are implanted into a space between the dummy spacer and the channel. The dummy spacer is removed and the ions are implanted into an LDD(Lightly Doped Drain). A spacer(100) is formed and the ions are implanted into the source/drain region. A metal electrode is formed.
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