| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to eliminate data through several test wafers, by interposing a metal oxide layer having a different property from an insulation layer of multilayered insulation layers to supply a polishing stop point. CONSTITUTION: The first interlayer dielectric(23) is formed on a semiconductor substrate(21) having a step. A planarization layer is formed on the first interlayer dielectric. The insulation layer including metal is formed on the planarization layer. The second interlayer dielectric(26) is formed on the insulation layer including the metal. A part of the second interlayer dielectric, the insulation layer including the metal and the planarization layer are chemically and mechanically polished to planarize the resultant structure. In the chemical mechanical polishing process, the polishing stop point is determined by whether polishing byproducts having a different conductivity type is generated.
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