SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

In a manufacturing method of a thin-film transistor having a polycrystalline Si film as its active region, an amorphous-phase Si film is first formed, and pulse laser beams are irradiated to crystallize the Si film and thereby form a polycrystalline Si film. After electrodes are made on a source region and a drain region, a SiNx film as a hydrogen-containing film is formed on the entire surface. By irradiating pulse laser beams to heat the SiNx film, hydrogen in the SiNx film is diffused into the polycrystalline Si film to hydrogenate it and reduce the trap density along crystal grain boundaries in the polycrystalline Si film.