发明名称 PLASMA ENHANCED FILM DEPOSITION SYSTEM FOR CONDUCTIVE METALLIC THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a plasma enhanced film deposition system for conductive metallic thin film, with which a conductive metallic thin film of nearly uniform thickness can be effectively deposited on a flexible resin sheet by using a small cathode electrode and further cost reduction can be attained by miniaturizing the system itself. SOLUTION: The plasma enhanced film deposition system is constituted of: an anode electrode and the cathode electrode which are relatively arranged at a prescribed space in a reactor vessel; an introducing part for introducing metallic compound gas into the reactor vessel; a vacuum aspirator for evacuating the reactor vessel; and a DC power unit for applying DC high voltage between the anode electrode and the cathode electrode to generate glow discharge. The cathode electrode is provided with a couple of grooves of prescribed width at a prescribed space, and the flexible resin sheet fed through one groove is fed out through the other groove, and the conductive metallic thin film can be deposited on the surface of the flexible resin sheet while making the sheet travel in the negative glow layer region on the cathode electrode.
申请公布号 JP2002004056(A) 申请公布日期 2002.01.09
申请号 JP20000186581 申请日期 2000.06.21
申请人 NIPPON LASER & ELECTRONICS LAB 发明人 TAJIMA HARUO;ANDO CHIE
分类号 H05H1/46;C23C16/06;C23C16/503;H01B13/00 主分类号 H05H1/46
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